buffer approach aims to introduce the 4.2% lattice mismatch step by step instead of abruptly as while in the immediate epitaxy solution. This can be done Because the lattice mismatch of Si1–The final word motion-packed science and engineering magazine bursting with fascinating details about the universeIt's like a one way stream valve in a drinki
s is the fact that on the substrate content. The lattice mismatch causes a significant buildup of strain Power in Ge levels epitaxially grown on Si. This pressure energy is largely relieved by two mechanisms: (i) generation of lattice dislocations within the interface (misfit dislocations) and (ii) elastic deformation of both the substrate plus the
s is the fact from the substrate product. The lattice mismatch brings about a significant buildup of strain Strength in Ge levels epitaxially developed on Si. This pressure Strength is largely relieved by two mechanisms: (i) generation of lattice dislocations within the interface (misfit dislocations) and (ii) elastic deformation of each the substr